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APT200GN60B2G
600V, VCE(ON) = 1.45V Typical
Field Stop IGBT
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. * 1200V Field Stop * Trench Gate: Low VCE(ON) * Easy Paralleling * Integrated Gate Resistor :Low EMI, High Reliability * RoHS Compliant
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current Total Power Dissipation Operating and Storage Junction Temperature Range
1
All Ratings: TC = 25C unless otherwise specified. Ratings
600 20 283 158 600 600A @ 600V 682 -55 to 175 300 Watts C Amps
Unit
Volts
Switching Safe Operating Area @ TJ = 175C
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 3.2mA, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) 2 Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor
Min
600 5.0 1.05 -
Typ
5.8 1.45 1.65 2
Max
6.5 1.85 25 1000 600 -
Unit
Volts
A nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-7628 Rev A 9-2008
Dynamic Characteristics
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
4 5
APT200GN60B2G
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 100A TJ = 150C, RG = 1.0 , VGE = 15V, L = 100H, VCE= 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 200A RG = 1.0 TJ = +25C
7
Min 600 -
Typ 14100 461 393 8.2 1180 85 660
Max -
Unit
pF
V
nC
A 50 80 560 100 13 15 11 50 80 620 70 14 16 10 mJ ns mJ ns
Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy
4 5 6
Inductive Switching (125C) VCC = 400V VGE = 15V IC = 200A RG = 1.0 TJ = +125C
-
Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions
R R
JC JC
Min
-
Typ
6.1
Max
0.13 N/A -
Unit
C/W
Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
WT
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-7628 Rev A 9-2008
Typical Performance Curves
400
V
GE
APT200GN60B2G
450 400 IC, COLLECTOR CURRENT (A) 350 300 250 200 150 100 50 0 8V 7.5V 7V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 200A C T = 25C
J
= 15V
15V 13V 12V 9V 8.5V
350 IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0 TJ= 55C TJ= 125C TJ= 150C
TJ= 25C
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
400 350 IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0 0
TJ= 150C TJ= 125C
16 14 12 10 8 6 4 2 0 0
VCE = 120V
TJ= -55C TJ= 25C
VCE = 300V
VCE = 480V
2
4
6
8
10
12
VCE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
200 400 600 800 1000 1200 1400 1600 GATE CHARGE (nC) FIGURE 4, Gate charge
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0 2.5
3.0 2.5 2.0
IC = 400A 2.0 IC = 200A 1.5 1.0 0.5 0 IC = 100A
IC = 400A IC = 200A 1.5 1.0 0.5 0 IC = 100A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
8
50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 500 450
0
25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
400 350 300 250 200 050-7628 Rev A 9-2008 150 100 50 0 25 50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
Typical Performance Curves
60 50 VGE = 15V 40 30 20 10 0
VCE = 400V TJ = 25C, or 125C RG = 1.0 L = 100H
APT200GN60B2G
800 td(OFF), TURN-OFF DELAY TIME (ns) 700 600 500 400 300 200 100 0
VCE = 400V RG = 1.0 L = 100H VGE =15V,TJ=125C VGE =15V,TJ=25C
td(ON), TURN-ON DELAY TIME (ns)
40 80 120 160 200 240 280 320 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 180 160 140 tr, RISE TIME (ns) tr, FALL TIME (ns) 120 100 80 60 40 20 40 80 120 160 200 240 280 320 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 35 30 25
TJ = 125C
G
40 80 120 160 200 240 280 320 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 250
RG = 1.0, L = 100H, VCE = 400V
RG = 1.0, L = 100H, VCE = 400V
200
150
TJ = 25C, VGE = 15V
100
TJ = 25 or 125C,VGE = 15V
50
TJ = 125C, VGE = 15V
0
EOFF, TURN OFF ENERGY LOSS (J)
Eon2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 1.0
40 80 120 160 200 240 280 320 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 25
V = 400V CE V = +15V GE R = 1.0
0
20
G
TJ = 125C
20 15 10 5 0
TJ = 25C
15
10
TJ = 25C
5
40 80 120 160 200 240 280 320 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 70 SWITCHING ENERGY LOSSES (J) 60 50 40
Eoff,200A
V = 400V CE V = +15V GE T = 125C
J
40 80 120 160 200 240 280 320 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 35 SWITCHING ENERGY LOSSES (J)
V = 400V CE = +15V V GE R = 1.0
G
0
Eoff,400A
Eon2,400A
30 25 20 15 10 5 0
Eon2,400A
Eoff,400A Eon2,200A Eoff,200A
30 20 10
Eon2,100A Eon2,200A Eoff,100A
050-7628 Rev A 9-2008
Eon2,100A Eoff,100A
5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
100,000 700 600 C, CAPACITANCE (pF) Cies 10,000 IC, COLLECTOR CURRENT (A) 500 400 300 200 100 0
APT200GN60B2G
1,000 Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 100
0 100 200 300 400 500 600 700 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.14 ZJC, THERMAL IMPEDANCE (C/W) 0.12 0.10 0.7 0.08 0.5 0.06 0.04 0.02 0 10-5 0.3
Note:
D = 0.9
PDM
t1 t2
0.1 0.05 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
70 FMAX, OPERATING FREQUENCY (kHz) 60 50 40 30 20 10
100C 75C
T = 125C J T = 75C C D = 50 % V = 400V CE R = 1.0
G
TJ (C)
0.032
Dissipated Power (Watts)
TC (C)
0.099
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
.000443
.0058601
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
ZEXT
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
50 100 150 200 250 300 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
0
0
050-7628 Rev A 9-2008
APT200GN60B2G
10% td(on) Gate Voltage
APT100DQ60
tr
V CC IC V CE
TJ = 125C
90%
Collector Current
A D.U.T.
5%
10%
5% Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage TJ = 125C td(off)
Collector Voltage tf
90%
10% Collector Current
Switching Energy
0
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX(R) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845)
0.40 (.016) 0.79 (.031)
4.50 (.177) Max.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
Gate Collector Emitter
050-7628 Rev A 9-2008
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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